PART |
Description |
Maker |
TC51832 |
Silicon Gate CMOS / 32768 word x 8 Bit CMOS Pseudo Static RAM
|
Toshiba
|
M5M5278DP M5M5278FP M5M5278J M5M5278VP-20V M5M5278 |
262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
M5M5256DFP-70LLIBM |
262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM
|
Renesas Electronics Corporation
|
CXK5V8257BTM/BYM/BM-10LL CXK5V8257BTM/BYM/BM-70LL |
32768-word x 8-bit High Speed CMOS Static RAM
|
SONY
|
HN58C256FP-20 |
32768-word x 8-bit Electrically Erasable and Programmable CMOS ROM
|
Hitachi Semiconductor
|
TC55257BFL-10L TC55257BFL-85 TC55257BPL-10 TC55257 |
85ns; V(dd/in): -0.3 to 7.0V; silicon gate CMOS: 32,768 word x 8-bit staic RAM (TC55257xxx) SILICON GATE CMOS 32768 WORD X 8 BIT STATIC RAM SILICON GATE CMOS 32,768 WORD X 8 BIT STATIC RAM 硅栅CMOS 32768字8位静态RAM
|
TOSHIBA[Toshiba Semiconductor] Toshiba Corporation Toshiba, Corp.
|
GR3281 |
32768 word by 8 bits (32K x 8) non-volatile CMOS Static Ram
|
List of Unclassifed Manufacturers ETC
|
HN27C256G HN27C256G-17 HN27C256G-25 HN27C256G-20 |
256K (32K x 8-bit) UV EPROM, 200ns 256K (32K x 8-bit) UV EPROM, 250ns 32768-WORD x 8-BIT CMOS UV ERASABLE AND PROGRAMMABLE ROM 256K (32K x 8-bit) UV EPROM, 170ns
|
Hitachi Semiconductor
|
CXK5T8257BTM/BYM/BM-12LLX CXK5T8257BTM/BYM/BM-10LL |
32K X 8 STANDARD SRAM, 100 ns, PDSO28 32K X 8 STANDARD SRAM, 120 ns, PDSO28 32768-word x 8-bit High Speed CMOS Static RAM
|
SONY
|
TC55329P |
32768 x 9-Bit CMOS SRAM
|
Toshiba
|
UPD27C256A |
32768 x 8-Bit CMOS UV EPROM
|
NEC Electronics
|